MOSFETs are critical components in power electronics, yet they are vulnerable to breakdown caused by overvoltage, overcurrent, ESD, thermal stress, or gate voltage spikes. At YFW Microelectronics, we address these challenges with advanced protection strategies and high-quality devices.
Organic Field-Effect Transistors (OFETs) are semiconductor devices leveraging organic semiconducting materials—typically conjugated polymers or small molecules—to modulate electrical current via an electric field. Similar to traditional inorganic FETs, OFETs consist of source/drain electrodes, an insulating layer, an organic semiconductor layer, and a gate electrode. The applied gate voltage induces charge carriers (holes or electrons) in the organic layer, controlling current flow between sourc
Excessive heating in field-effect transistors (FETs) is a critical issue that demands careful analysis and targeted solutions. Here are the primary causes and recommendations to address this problem, supported by technical insights and YFW Micro’s expertise in high-performance semiconductor design.
MOSFETs are critical components in modern electronics, but their performance depends on mitigating breakdown risks. At YFW Microelectronics, we prioritize robust design to ensure our MOSFETs withstand harsh conditions. Here’s a breakdown of the most common failure mechanisms and our engineering solutions:
MOSFETs are critical in power electronics, but their performance is significantly influenced by parasitic parameters. Parasitic inductances, such as source inductance (Lₛ) from bonding wires and PCB traces, and drain inductance (Lₚ) from packaging, directly affect switching dynamics. Lₛ causes delayed turn-on/off and resonance with input capacitance (Ciss), leading to gate voltage oscillations. Meanwhile, Lₚ limits di/dt during turn-on but induces voltage overshoots during turn-off, increasing p
